Optical bandgap formation in AlInGaN alloys
Identifieur interne : 011B94 ( Main/Repository ); précédent : 011B93; suivant : 011B95Optical bandgap formation in AlInGaN alloys
Auteurs : RBID : Pascal:00-0416957Descripteurs français
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- 7866F, 7855C, 7840F, 7120N, 7820C, 7847, Etude expérimentale, Aluminium composé, Indium composé, Gallium composé, Semiconducteur III-V, Couche épitaxique semiconductrice, Photoluminescence, Facteur réflexion, Spectre UV, Spectre résolution temporelle, Bande interdite, Constante optique, Semiconducteur bande interdite large.
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Abstract
We report on the spectral dynamics of the reflectivity, site-selectively excited photoluminescence, photoluminescence excitation, and time-resolved luminescence in quaternary AlInGaN epitaxial layers grown on GaN templates. The incorporation of a few percents of In into AlGaN causes significant smoothening of the band-bottom potential profile in AlInGaN layers owing to improved crystal quality. An abrupt optical bandgap indicates that a nearly lattice-matched AlInGaN/GaN heterostructure with large energy band offsets can be grown for high-efficiency light-emitting devices. © 2000 American Institute of Physics.
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Tamulaitis</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of MSAR, Vilnius University, Naugarduko 24, 2006 Vilnius, Lithuania</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country xml:lang="fr">Lituanie</country><wicri:regionArea>Institute of MSAR, Vilnius University, Naugarduko 24, 2006 Vilnius</wicri:regionArea><wicri:noRegion>2006 Vilnius</wicri:noRegion></affiliation><affiliation wicri:level="2"><inist:fA14 i1="03"><s1>Department of ECSE and CIEEM, Rensselaer Polytechnic Institute, Troy, New York 12180</s1></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">État de New York</region></placeName><wicri:cityArea>Department of ECSE and CIEEM, Rensselaer Polytechnic Institute, Troy</wicri:cityArea></affiliation><affiliation wicri:level="2"><inist:fA14 i1="04"><s1>Sensor Electronic Technology, Inc., 21 Cavalier Way, Latham, New York 12110</s1></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">État de New York</region></placeName><wicri:cityArea>Sensor Electronic Technology, Inc., 21 Cavalier Way, Latham</wicri:cityArea></affiliation></author><author><name sortKey="Kazlauskas, K" uniqKey="Kazlauskas K">K. Kazlauskas</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of MSAR, Vilnius University, Naugarduko 24, 2006 Vilnius, Lithuania</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country xml:lang="fr">Lituanie</country><wicri:regionArea>Institute of MSAR, Vilnius University, Naugarduko 24, 2006 Vilnius</wicri:regionArea><wicri:noRegion>2006 Vilnius</wicri:noRegion></affiliation></author><author><name sortKey="Jursenas, S" uniqKey="Jursenas S">S. 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Zukauskas</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of MSAR, Vilnius University, Naugarduko 24, 2006 Vilnius, Lithuania</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country xml:lang="fr">Lituanie</country><wicri:regionArea>Institute of MSAR, Vilnius University, Naugarduko 24, 2006 Vilnius</wicri:regionArea><wicri:noRegion>2006 Vilnius</wicri:noRegion></affiliation></author><author><name sortKey="Khan, M A" uniqKey="Khan M">M. A. Khan</name><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Department of ECE, University of South Carolina, Columbia, South Carolina 29208</s1><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Caroline du Sud</region></placeName><wicri:cityArea>Department of ECE, University of South Carolina, Columbia</wicri:cityArea></affiliation></author><author><name sortKey="Yang, J W" uniqKey="Yang J">J. W. 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Shur</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of MSAR, Vilnius University, Naugarduko 24, 2006 Vilnius, Lithuania</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country xml:lang="fr">Lituanie</country><wicri:regionArea>Institute of MSAR, Vilnius University, Naugarduko 24, 2006 Vilnius</wicri:regionArea><wicri:noRegion>2006 Vilnius</wicri:noRegion></affiliation></author><author><name sortKey="Gaska, R" uniqKey="Gaska R">R. 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The incorporation of a few percents of In into AlGaN causes significant smoothening of the band-bottom potential profile in AlInGaN layers owing to improved crystal quality. An abrupt optical bandgap indicates that a nearly lattice-matched AlInGaN/GaN heterostructure with large energy band offsets can be grown for high-efficiency light-emitting devices. © 2000 American Institute of Physics.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0003-6951</s0></fA01><fA02 i1="01"><s0>APPLAB</s0></fA02><fA03 i2="1"><s0>Appl. phys. lett.</s0></fA03><fA05><s2>77</s2></fA05><fA06><s2>14</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Optical bandgap formation in AlInGaN alloys</s1></fA08><fA11 i1="01" i2="1"><s1>TAMULAITIS (G.)</s1></fA11><fA11 i1="02" i2="1"><s1>KAZLAUSKAS (K.)</s1></fA11><fA11 i1="03" i2="1"><s1>JURSENAS (S.)</s1></fA11><fA11 i1="04" i2="1"><s1>ZUKAUSKAS (A.)</s1></fA11><fA11 i1="05" i2="1"><s1>KHAN (M. A.)</s1></fA11><fA11 i1="06" i2="1"><s1>YANG (J. 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